21314hk tc-00003090/d1813hk pe no. a2267-1/6 semiconductor components industries, llc, 2014 february, 2014 http://onsemi.com EMH2418R features ? low on-resistance ? ? 2.5v drive ? ? common-drain type ? protection diode in ? built-in gate protection resistor ? best suited for lib charging and discharging switch ?? halogen free compliance specifications absolute maximum ratings at ta = 25 ? c parameter symbol value unit drain to source voltage v dss 24 v gate to source voltage v gss ? 12 v drain current (dc) i d 9a drain current (pulse) pw ? 10 ? s, duty cycle ? 1% i dp 40 a power dissipation when mounted on ceramic substrate(900mm 2 ? 0.8mm) 1unit p d 1.3 w total dissipation when mounted on ceramic substrate(900mm 2 ? 0.8mm) p t 1.4 w junctiontemperature tj 150 ? c storage temperature tstg - 55 to +150 ? c thermal resistance ratings parameter symbol value unit junction to ambient when mounted on ceramic substrate(900mm 2 ? 0.8mm) r ? ja 96 ? c/w ordering & package information device package shipping EMH2418R-tl-h pb-free and halogen free emh8 3,000 pcs. / reel orderin g numbe r : ena2267a electrical connection n-channel n-channel power mosfet 24v, 9a, 15m ? , dual emh8 8 765 1234 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended oper ating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. packing type:tl tl marking lt lot no.
EMH2418R no.a2267-2/6 electrical characteristics at ta ? 25 ? c parameter symbol conditions value unit min typ max drain to source breakdown voltage v( br ) dss i d =1ma, v gs =0v 24 v zero-gate voltage drain current i dss v ds =20v, v gs =0v 1 ? a gate to source leakage current i gss v gs =8v, v ds =0v ? 1 ? a gate threshold voltage v gs (th) v ds =10v, i d =1ma 0.5 1.3 v forward transconductance g fs v ds =10v, i d =4a 4 s static drain to source on-state resistance r ds (on)1 i d =4a, v gs =4.5v 9.6 12 15 m ? r ds (on)2 i d =4a, v gs =4.0v 10.0 12.5 16.3 m ? r ds (on)3 i d =4a, v gs =3.1v 11.3 14.2 20 m ? r ds (on)4 i d =2a, v gs =2.5v 13.2 16.5 23.1 m ? turn-on delay time t d (on) see specified test circuit. 120 ns rise time t r 170 ns turn-off delay time t d (off) 17500 ns fall time t f 22600 ns total gate charge qg v ds =10v, v gs =4.5v, i d =9a 4.4 nc gate to source charge qgs 0.9 nc gate to drain ?miller? charge qgd 0.7 nc forward diode voltage v sd i s =9a, v gs =0v 0.8 1.2 v switching time test circuit pw = 10 ? s d.c. ? 1% p. g 50 ? g s d i d =4a r l =2.5 ? v dd =10v v out EMH2418R v in 4.5v 0v v in rg=1k ? rg
EMH2418R no.a2267-3/6
EMH2418R no.a2267-4/6
EMH2418R no.a2267-5/6 package dimensions EMH2418R-tl-h sot-383fl/emh8 case419at issue o unit : mm 1: source1 2: gate1 3: source2 4: gate2 5: drain 6: drain 7: drain 8: drain soldering footprint 0.4 0.3 0.5 1.9
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